CYG Wayon / Super Junction MOSFET
Wayon WMOSTM C2 is a new silicon-based cutting-edge technology for high voltage power MOSFET. Using advanced super junction principle, the technology can reduce RDS(on) per area significantly compared to conventional VDMOS. This technology achieves up to 38% better FOM (RDS(on)*Qg) versus the previous WMOSTM C1 technology. This improvement makes switching applications more efficient and more compact. WMOSTM C2 provides wide voltage range MOSFETs and is cost-effective compared to VDMOS.