Wayon WMOSTM C2 Power MOSFET
The new product released from Wayon super junction technology!
Wayon WMOSTM C2 is a new silicon-based cutting-edge technology for high voltage power MOSFET. Using advanced super junction principle, the technology can reduce RDS(on) per area significantly compared to conventional VDMOS. This technology achieves up to 38% better FOM (RDS(on)*Qg) versus the previous WMOSTM C1 technology. This improvement makes switching applications more efficient and more compact. WMOSTM C2 provides
wide voltage range MOSFETs and is cost-effective compared with VDMOS.
Key Features & Benefits
● Ultra low RDS(on) resulting in low conduction losses and improved efficiency in end-applications
● Ultra low gate charge that improves switching performance
● 100% avalanche tested
● Wide voltage range: 500V-900V
● Green package Cost effective alternative to VDMOS